Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-08-09
2011-08-09
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S225500, C365S243500
Reexamination Certificate
active
07995378
ABSTRACT:
In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell.
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Abu-Rahma Mohamed H.
Park Dongkyu
Yoon Sei Seung
Zhong Cheng
Byrne Harry W
Elms Richard
Qualcomm Incorporated
Talpalatsky Semion
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