MRAM design to reduce dissimilar nearest neighbor effects

Details MRAM design to reduce dissimilar nearest neighbor effects MRAM design to reduce dissimilar nearest neighbor effects

1997-10-31

1999-11-09

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, 365171, 365 66, 365 8, 365 87, G11C 1115

Patent

active

059826584

ABSTRACT:
A magnetoresistive memory array which has a row of active sense lines with each sense line including magnetoresistive bits and word lines extending over the bits. Each active sense line ending in a termination bit having a configuration selected to cause an adjacent bit to experience a magnetic field similar to that experienced by the remaining bits in the sense line. An inactive sense line located at each end of the row of active sense lines.

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patent: 5012444 (1991-04-01), Hurst, Jr. et al.
patent: 5636159 (1997-06-01), Pohm
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5793697 (1998-08-01), Scheuerlein

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