MRAM cell with domain wall switching and field select

Details MRAM cell with domain wall switching and field select MRAM cell with domain wall switching and field select

2006-12-26

2006-12-26

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S225500, C365S209000

Reexamination Certificate

active

07154773

ABSTRACT:
An MRAM cell includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship and separated by a non-magnetic tunneling barrier layer. The first magnetic region includes a reference layer having a fixed magnetization adjacent the tunneling barrier layer. The second magnetic region includes a free layer having first and second free magnetizations aligned with an easy axis of magnetization of the free layer. The first and second free magnetizations are oppositely aligned and separated by a magnetic domain wall. The magnetic domain wall is magnetically movable along the easy axis of the free layer, and the free layer is magnetically coupled to magnetic fields generated by first and second currents running through first and second conductive lines crossing each other, wherein the easy axis of the free layer is inclined under an inclination angle relative to both the first and second conductive lines.

REFERENCES:
patent: 6704220 (2004-03-01), Leuschner
patent: 6807092 (2004-10-01), Braun

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