MRAM arrays and methods for writing and reading magnetic...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S173000, C365S205000, C365S209000

Reexamination Certificate

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07436698

ABSTRACT:
A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

REFERENCES:
patent: 6909631 (2005-06-01), Durlam et al.

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