Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-03-20
2010-12-07
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07848137
ABSTRACT:
An MRAM according to the present invention is provided with a magnetic recording layer being a ferromagnetic layer and a pinned layer connected to the magnetic recording layer through a nonmagnetic layer. The magnetic recording layer includes a magnetization switching region, a first magnetization fixed region and a second magnetization fixed region. The magnetization switching region has reversible magnetization and overlaps with the pinned layer. The first magnetization fixed region and the second magnetization fixed region are both connected to the same one end of the magnetization switching region. Also, the first magnetization fixed region and the second magnetization fixed region respectively have first fixed magnetization and second fixed magnetization whose directions are fixed. One of the first fixed magnetization and the second fixed magnetization is fixed in a direction toward the above-mentioned one end, and the other is fixed in a direction away from the above-mentioned one end.
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Fukami Shunsuke
Kasai Naoki
Le Vu A
NEC Corporation
Young & Thompson
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