MRAM and data read/write method for MRAM

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S171000

Reexamination Certificate

active

07848137

ABSTRACT:
An MRAM according to the present invention is provided with a magnetic recording layer being a ferromagnetic layer and a pinned layer connected to the magnetic recording layer through a nonmagnetic layer. The magnetic recording layer includes a magnetization switching region, a first magnetization fixed region and a second magnetization fixed region. The magnetization switching region has reversible magnetization and overlaps with the pinned layer. The first magnetization fixed region and the second magnetization fixed region are both connected to the same one end of the magnetization switching region. Also, the first magnetization fixed region and the second magnetization fixed region respectively have first fixed magnetization and second fixed magnetization whose directions are fixed. One of the first fixed magnetization and the second fixed magnetization is fixed in a direction toward the above-mentioned one end, and the other is fixed in a direction away from the above-mentioned one end.

REFERENCES:
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 11-195824 (1999-07-01), None
patent: 2002-56665 (2002-02-01), None
patent: 2004-153070 (2004-05-01), None
patent: 2004-172614 (2004-06-01), None
patent: 2004-179183 (2004-06-01), None
patent: 2004-348934 (2004-12-01), None
patent: 2005-505889 (2005-02-01), None
patent: 2005-93488 (2005-04-01), None
patent: 2005-109470 (2005-04-01), None
patent: 2005-150303 (2005-06-01), None
patent: 2005-191032 (2005-07-01), None
patent: 2005-223086 (2005-08-01), None
patent: 2005-277147 (2005-10-01), None
patent: 2005-294340 (2005-10-01), None
patent: 2006-073930 (2006-03-01), None
patent: 2006-270069 (2006-10-01), None
patent: 2006/090656 (2006-08-01), None
A Novel Nonvolatile Memory Wit h Spin Torque Transfer Magnetization Switchiing: SIN-RAM, M Hosomi et al, 34002766, 2005.
Real-Space Observation of Current Driven Domain Wall Motion in Submieron Magnetic Wires, A. Yamaguchi et al., 077205-1, 2004 The American Physical Society, vol. 92, No. 7.
Research Trends in Spin Transfer Magnetization Switching, K. Yagami et al., vol. 28 No. 9, 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MRAM and data read/write method for MRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MRAM and data read/write method for MRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM and data read/write method for MRAM will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4219320

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.