Mounting structure of high-frequency semiconductor apparatus...

Communications: directive radio wave systems and devices (e.g. – Return signal controls external device – Radar mounted on and controls land vehicle

Reexamination Certificate

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C342S082000, C342S089000, C342S175000, C331S1070DP, C331S1070DP, C331S096000, C333S219000, C333S219100, C333S227000, C333S230000

Reexamination Certificate

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10871054

ABSTRACT:
In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.

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Millimeter-wave DRO with Excellent Temperature Stability of Frequency, Takatoshi Kato et al, 29thEuropean Microwave Conference—Munich 1999, pp. 197-200.
A novel millimeter-wave multilayer IC with planar TE010mode dielectric resonator, Takatoshi Kato et al, 1998 Asia-Pacific Microwave Conference, pp. 147-150.

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