Photocopying – Projection printing and copying cameras – Detailed holder for photosensitive paper
Reexamination Certificate
2002-07-17
2004-11-09
Nguyen, Henry Hung (Department: 2851)
Photocopying
Projection printing and copying cameras
Detailed holder for photosensitive paper
C355S075000
Reexamination Certificate
active
06816238
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to motion feed-through devices into vacuum chambers from the exterior. More particularly, the invention relates to the application of such devices in lithographic projection apparatuses that have a radiation system for supplying a projection beam of radiation; a first object table provided with a mask holder for holding a mask; a second object table provided with a substrate holder for holding a substrate; and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate.
2. Discussion of Related Art
For the sake of simplicity, the projection system may hereinafter be referred to as the “lens”, however, this term should be broadly interpreted as encompassing various types of projection system, including refractive optics, reflective optics, catadioptric systems, and charged particle optics, for example. The radiation system may also include elements operating according to any of these principles for directing, shaping or controlling the projection beam of radiation, and such elements may also be referred to below, collectively or singularly, as a “lens”. In addition, the first and second object tables may be referred to as the “mask table” and the “substrate table”, respectively. Further, the lithographic apparatus may be of a type having two or more mask tables and/or two or more substrate tables. In such “multiple stage” devices the additional tables may be used in parallel, or preparatory steps may be carried out on one or more stages while one or more other stages are being used for exposures. Twin stage lithographic apparatuses are described in International Patent Applications WO 98/28665 and WO 98/40791, for example the entire contents of each are incorporated herein by reference.
Lithographic projection apparatuses can be used, for example, in the manufacture of integrated circuits (ICs). In such a case, the mask (reticle) may contain a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target area (die) on a substrate (silicon wafer) which has been coated with a layer of photosensitive material (resist). In general, a single wafer will contain a whole network of adjacent dies which are successively irradiated via the reticle, one at a time. In one type of lithographic projection apparatus, each die is irradiated by exposing the entire reticle pattern onto the die in one go; such an apparatus is commonly referred to as a wafer stepper. In an alternative apparatus—which is commonly referred to as a step-and-scan apparatus—each die is irradiated by progressively scanning the reticle pattern under the projection beam in a given reference direction (the “scanning” direction) while synchronously scanning the wafer table parallel or anti-parallel to this direction; since, in general, the projection system will have a magnification factor M (generally<1), the speed v at which the wafer table is scanned will be a factor M times that at which the reticle table is scanned. More information with regard to lithographic devices as here described can be gleaned from International Patent Application WO 97/33205 the entire contents of which are incorporated herein by reference.
In a lithographic apparatus, the size of features that can be imaged onto the wafer is limited by the wavelength of the projection radiation. To produce integrated circuits with a higher density of devices and hence higher operating speeds, it is desirable to be able to image smaller features. Whilst most current lithographic projection apparatuses employ ultraviolet light generated by mercury lamps or excimer lasers, it has been proposed to use shorter wavelength radiation of around 13 nm. Such radiation is termed extreme ultraviolet (EUV) or soft x-ray, and possible sources include laser plasma source or synchrotron radiation from electron storage rings. An outline design of a lithographic projection apparatus using synchrotron radiation is described in “Synchrotron radiation sources and condensers for projection x-ray lithography”, J B Murphy et al, Applied Optics Vol. 32 No. 24 pp 6920-6929 (1993) the entire contents of which are incorporated herein by reference.
Other proposed radiation types include electron beams and ion beams. These types of beam share with EUV the requirement that the beam path, including the mask, substrate and optical components, be kept in a high vacuum. This is to prevent absorption and/or scattering of the beam, whereby a total pressure of less than about 10
−6
millibar is typically necessary for such charged particle beams. Wafers can be contaminated and optical elements for EUV radiation can be spoiled by the deposition of carbon layers on their surface, which imposes the additional requirement that hydrocarbon partial pressures should generally be kept below 10
−8
or 10
−9
millibar. Otherwise, for apparatuses using EUV radiation, the total vacuum pressure need only be 10
−3
or 10
−4
mbar, which would typically be considered a rough vacuum.
Further information with regard to the use of electron beams in lithography can be gleaned, for example, from U.S. Pat. Nos. 5,079,122 and 5,260,151, as well as from EP-A 0 965 888, the entire contents of each are incorporated herein by reference.
Working in such a high vacuum imposes quite onerous conditions on the components that must be put into the vacuum and on the vacuum chamber seals, especially those around any part of the apparatus where a motion must be fed-through to components inside the chamber from the exterior. For components inside the chamber, materials that minimize or eliminate contaminant and total outgassing, i.e. both outgassing from the materials themselves and from gases adsorbed on their surfaces, should be used. It would be very desirable to be able to reduce or circumvent such restrictions.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide an improved motion feed-through to allow control of an object, particularly an object table of a lithographic apparatus, placed within a vacuum chamber from the outside.
According to the present invention, this and other objects are achieved in a lithographic projection apparatus that has a radiation system for supplying a projection beam of radiation; a first object table provided with a mask holder for holding a mask; a second object table provided with a substrate holder for holding a substrate; and a projection system for imaging an irradiated portion of the mask onto a target portion of the substrate. The lithographic projection apparatus also has a vacuum chamber having a wall enclosing at least one of the first and second object tables, the vacuum chamber wall having an aperture therein; a sliding seal for sealing the aperture and displaceable in at least one direction parallel to the vacuum chamber wall through a predetermined rang, of movement whilst maintaining the seal of the aperture; a mechanical linkage for transmitting displacement of the sliding seal to the object table within the vacuum chamber to cause corresponding movement thereof; and a positioning component for displacing the sliding seal, thereby to displace the object table within the vacuum chamber.
The sliding seal arrangement allows a relatively large movement (compared to conventional bellows, for example) to be fed through into the vacuum chamber and also can be constructed to withstand repeated and rapid movements, with a mean time between failures of a very large number of cycles.
Current lithography apparatuses are designed for use in clean room environments and therefore some steps have conventionally been taken to reduce possible sources of contamination of wafers that are processed by the apparatus. However, conventional designs of wafer, mask and transfer stages are very complicated and employ large numbers of components for sensor and drive arrangements. Such stages also need to be provided with large numbers of signal and control cables and other utiliti
Bisschops Theodorus H. J.
Bouwer Adrianus G.
Driessen Johannes C.
Renkens Michael J. M.
Soemers Hermanus M. J. R.
ASML Netherlands B.V.
Nguyen Henry Hung
Pillsbury & Winthrop LLP
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