MOSFETS structure with a recessed self-aligned silicide contact

Details MOSFETS structure with a recessed self-aligned silicide contact MOSFETS structure with a recessed self-aligned silicide contact

1998-03-30

1999-11-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257412, H01L 2972

Patent

active

059820012

ABSTRACT:
The MOSFETS structure includes a field oxide region formed on a silicon substrate. A gate includes a silicon dioxide layer formed on the silicon substrate, a first conductive layer formed on the silicon dioxide layer, a second oxide layer formed on the silicon dioxide layer and abutting to the first conductive layer and a first silicide layer formed on the first conductive layer and the second oxide layer. A pad oxide layer is formed on the silicon substrate and abutting to the silicon dioxide layer. An extended source/drain junction is formed under the pad oxide layer and abutting to the pad oxide layer, wherein one side of the extended source/drain junction is aligned with one side of the first conductive layer. A second silicide layer is formed between the field oxide region and the pad oxide layer, wherein the second silicide layer abutting to the field oxide region and the pad oxide layer. A first metal layer is formed right under the second silicide layer and aligned with the second silicide layer. A fourth oxide layer is formed on the field oxide region, the first silicide layer, the second silicide layer and the pad oxide layer, wherein the fourth oxide layer has three contact holes to expose three portions of the first silicide layer and the second silicide layer. A second metal layer is formed on the fourth oxide layer and filled in the contact hole.

REFERENCES:
patent: 5397909 (1995-03-01), Moslehi
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5841173 (1998-11-01), Yamashita
patent: 5883418 (1999-03-01), Kimura

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