Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-30
2008-10-28
Gurley, Lynne A. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S517000, C257SE21561, C257SE21570, C257SE21704
Reexamination Certificate
active
07442585
ABSTRACT:
The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel region is graded along a direction that is substantially parallel to a substrate surface in which the semiconductor device is located. Specifically, the semiconductor device comprises a field effect transistor (FET) that has a SiGe channel with a laterally graded germanium content.
REFERENCES:
patent: 5777364 (1998-07-01), Crabbe et al.
patent: 6004137 (1999-12-01), Crabbe et al.
Chen Xiangdong
Zhu Huilong
Gebremariam Samuel A
Gurley Lynne A.
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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