MOSFET with body contacts

Details MOSFET with body contacts MOSFET with body contacts

2006-10-04

2009-06-30

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000, C438S517000, C257S347000

Reexamination Certificate

active

07553709

ABSTRACT:
A semiconductor structure includes a metal oxide semiconductor field effect transistor that includes a body contact region that extends from body region located beneath a channel region that separates a pair of source/drain regions within the metal oxide semiconductor field effect transistor. The body contact region is recessed with respect to a surface of the channel region to avoid shorting between a body contact and the source/drain regions.

REFERENCES:
patent: 5872383 (1999-02-01), Yagishita
patent: 5962895 (1999-10-01), Beyer et al.
patent: 6387739 (2002-05-01), Smith, III
patent: 6724048 (2004-04-01), Min et al.

Affiliated with

Also associated with

Rating

MOSFET with body contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET with body contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET with body contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4065977