Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-01
2005-03-01
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S407000
Reexamination Certificate
active
06861712
ABSTRACT:
A stacked metal gate MOSFET and fabrication method are provided. The method comprises: forming a gate oxide layer overlying a channel region; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer; and, establishing a gate work function in response to the combination of the first and second thicknesses. In one example, the first metal layer has a thickness of less than about 1.5 nanometers (nm) the second metal layer has a thickness greater than about 10 nm. Then, establishing a gate work function includes establishing a gate work function substantially in response to the second metal second thickness. Alternately, the first metal thickness is greater than about 20 nm. Then, the gate work function is established substantially in response to the first metal thickness.
REFERENCES:
patent: 6410376 (2002-06-01), Ng et al.
Qiang Lu, Ronald Lin, Pushkar Ranade, Tsu-Jae King, Chenming Hu; Metal Gate Work Function Adjustment for Future CMOS Technology, VLSI tech.
Igor Polishchuk, Pushkar Ranade, Tsu-Jae King and Chenming Hu, Dual Work Function Metal Gate CMOS Technology Using Metal Interdiffusion. IEEE Electron Device Letters, 22 (2001) 444.
Gao Wei
Ono Yoshi
Curtin Joseph P.
Pham Hoai
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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