Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-26
1999-03-02
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257494, H01L 2976, H01L 2994, H01L 2358
Patent
active
058775293
ABSTRACT:
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve higher breakdown voltage and improved device ruggedness. The power transistor includes a core cell area which includes a plurality of power transistor cells and a termination area. The power transistor further includes an outer pickup guarding ring, disposed in the termination area guarding the core cell area, for picking up free charged-particles generated in the termination area for preventing the free charged particles from entering the core cell area. In another preferred embodiment, the power transistor further includes an inner pickup guarding fence and blocks, disposed between the termination area and the core cell area for picking up free charged-particles not yet picked up by the outer pickup guarding ring for preventing the free charged particles from entering the core cell area.
REFERENCES:
patent: 5072266 (1991-12-01), Bulucea
patent: 5170241 (1992-12-01), Yoshimura et al.
patent: 5430314 (1995-07-01), Yilmaz
Cheng Shu-Hui
Hshieh Fwu-Iuan
Lin True-Lon
Nim Danny Chi
So Koon Chong
Lin Bo-In
Loke Steven H.
MegaMos Corporation
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