MOSFET structure and process for low gate induced drain leakage

Details MOSFET structure and process for low gate induced drain leakage MOSFET structure and process for low gate induced drain leakage

1999-02-16

2000-08-01

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257387, 257412, 257344, 257336, 257333, A01L 2976, A01L 2994, A01L 31113, A01L 31119, A01L 31062

Patent

active

060970707

ABSTRACT:
A structure and method for forming a metal oxide semiconductor field effect transistor structure comprises, a substrate having a gate-channel region and source and drain regions adjacent the gate-channel region, a gate insulator over the substrate, a central gate conductor positioned above the gate-channel region and over the gate insulator and outer gate conductors over the gate insulator and adjacent the central gate conductor, wherein the gate insulator has a first thickness under the central gate conductor and a second thickness greater than the first thickness under the outer gate conductors. The center and outer gate conductors may consist of different material types (i.e., different work functions). The polarity of the source-drain doping is independent of the polarity of the central or outer gate conductors.

REFERENCES:
patent: 3855610 (1974-12-01), Matsuda et al.
patent: 5061647 (1991-10-01), Roth et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5210435 (1993-05-01), Roth et al.
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5371391 (1994-12-01), Sato
patent: 5405787 (1995-04-01), Kurimoto
patent: 5426327 (1995-06-01), Murai
patent: 5460998 (1995-10-01), Liu
patent: 5498556 (1996-03-01), Hong et al.
patent: 5554544 (1996-09-01), Hsu
patent: 5619057 (1997-04-01), Komatsu
patent: 5621236 (1997-04-01), Choi et al.
patent: 5654212 (1997-08-01), Jang
patent: 5684317 (1997-11-01), Hwang
patent: 5714786 (1998-02-01), Gonzalez et al.
patent: 5892249 (1999-04-01), Courtright et al.
patent: 5900668 (1999-05-01), Wollesen

Affiliated with

Also associated with

Rating

MOSFET structure and process for low gate induced drain leakage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET structure and process for low gate induced drain leakage , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET structure and process for low gate induced drain leakage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-666623