MOSFET-Schottky rectifier-diode integrated circuits with...

Details MOSFET-Schottky rectifier-diode integrated circuits with... MOSFET-Schottky rectifier-diode integrated circuits with...

2011-08-23

2011-08-23

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S334000, C257SE29262

Reexamination Certificate

active

08004036

ABSTRACT:
A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for GS clamp diodes and avalanche protection for GD clamp diodes.

REFERENCES:
patent: 7511357 (2009-03-01), Hshieh
patent: 2005/0029585 (2005-02-01), He et al.

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