MOSFET process using implantation through silicon

Details MOSFET process using implantation through silicon MOSFET process using implantation through silicon

1986-10-23

1987-07-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 357 233, H01L 2100

Patent

active

046824049

ABSTRACT:
A simplified small geometry MOS process incorporates a tungsten shunt layer on the thin silicon gate electrode layer allowing reduction of the thickness of the silicon layer and the use of an implant through the layer to form precisely controlled shallow source/drain regions without channeling. Lightly doped extension of the source and drain regions are automatically formed by an LDD implant following an isotropic undercutting etch of the silicon. The process is readily adapted to optional guard band implants and other beneficial structures such as gate sidewall oxide spacers.

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