MOSFET power transistor having offset gate and drain pads to red

Details MOSFET power transistor having offset gate and drain pads to red MOSFET power transistor having offset gate and drain pads to red

1997-03-06

2000-10-24

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257401, H01L 31119, H01L 2976

Patent

active

061371386

ABSTRACT:
In an RF/microwave power amplifier comprising a linear array of MOSFET transistors in a semiconductor substrate, the transistors having gate and drain bond pads between adjacent transistors, drain to gate feedback capacitance is reduced by offsetting the drain bond pads from the gate bond pads. Bond wires to the drain bond pads extend in the offset direction from the drain bond pads, and bond wires to the gate bond pads extend from the gate bond pads in the opposite direction to reduce capacitive coupling between the bond wires and reduce the length of the bond wires.

REFERENCES:
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5886372 (1999-03-01), Kai et al.
Alan Wood et al., "High Performance Silicon LDMOS Technology for 2GHz RF Power Amplifier Applications", Technical Digest, IEDM Conference 1996, pp. 87-90.
Gordon Ma et al., "High Efficiency LDMOS Power FET for Low Voltage Wireless Communications", Technical Digest, IEDM Conference 1996, pp. 91-94.

Affiliated with

Also associated with

Rating

MOSFET power transistor having offset gate and drain pads to red does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET power transistor having offset gate and drain pads to red, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET power transistor having offset gate and drain pads to red will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1966450