Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-07-26
2011-07-26
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S676000, C257S693000, C257S696000, C257S776000, C257SE23010, C257SE23031, C257SE23039, C257SE23043, C361S773000, C361S813000, C438S123000, C438S197000
Reexamination Certificate
active
07985991
ABSTRACT:
A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.
REFERENCES:
patent: 3849187 (1974-11-01), Fetscher et al.
patent: 4927505 (1990-05-01), Sharma et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5053851 (1991-10-01), Berndlmaier et al.
patent: 5134460 (1992-07-01), Brady et al.
patent: 5172214 (1992-12-01), Casto
patent: 5489803 (1996-02-01), Kanbe et al.
patent: 5532512 (1996-07-01), Fillion et al.
patent: 5539254 (1996-07-01), Eytcheson et al.
patent: 5814884 (1998-09-01), Davis et al.
patent: 6040626 (2000-03-01), Cheah et al.
patent: 6077727 (2000-06-01), Osawa et al.
patent: 6084310 (2000-07-01), Mizuno et al.
patent: 6249041 (2001-06-01), Kasem et al.
patent: 6288905 (2001-09-01), Chung
patent: 6423623 (2002-07-01), Bencuya et al.
patent: 6744124 (2004-06-01), Chang et al.
patent: 6774466 (2004-08-01), Kajiwara et al.
patent: 6992385 (2006-01-01), Satou et al.
patent: 7256501 (2007-08-01), Okamoto et al.
patent: 7332757 (2008-02-01), Kajiwara et al.
patent: 7342267 (2008-03-01), Kajiwara et al.
patent: 2005/0218494 (2005-10-01), Satou et al.
patent: 57-103342 (1982-06-01), None
patent: 1-266752 (1989-10-01), None
patent: 02-281737 (1990-11-01), None
patent: 2-310956 (1990-12-01), None
patent: 04-004764 (1992-01-01), None
patent: 5-121615 (1993-05-01), None
patent: 05-343578 (1993-12-01), None
patent: 06-291223 (1994-10-01), None
patent: 07-078900 (1995-03-01), None
patent: 8-064634 (1996-03-01), None
patent: 08139241 (1996-05-01), None
patent: 09-129798 (1997-05-01), None
patent: 11-054673 (1999-02-01), None
Hata Toshiyuki
Hirashima Toshinori
Ishii Shigeru
Kajiwara Ryoichi
Kishimoto Munehisa
Antonelli, Terry Stout & Kraus, LLP.
Chambliss Alonzo
Hitachi Tohbu Semiconductor, Ltd.
Renesas Electronics Corporation
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