MOSFET package

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – Small lead frame for connecting a large lead frame to a...

Reexamination Certificate

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Details

C257S676000, C257S690000, C257S735000, C361S773000, C361S813000, C438S123000

Reexamination Certificate

active

07394146

ABSTRACT:
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

REFERENCES:
patent: 3849187 (1974-11-01), Fetscher et al.
patent: 4927505 (1990-05-01), Sharma et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5053851 (1991-10-01), Berndlmaier et al.
patent: 5134460 (1992-07-01), Bardy et al.
patent: 5489803 (1996-02-01), Kanbe et al.
patent: 5532512 (1996-07-01), Fillion et al.
patent: 5814884 (1998-09-01), Davis et al.
patent: 5821611 (1998-10-01), Kubota et al.
patent: 6040626 (2000-03-01), Cheah et al.
patent: 6077727 (2000-06-01), Osawa et al.
patent: 6084310 (2000-07-01), Mizuno et al.
patent: 6249041 (2001-06-01), Kasem et al.
patent: 6288905 (2001-09-01), Chung
patent: 6423623 (2002-07-01), Bencuya et al.
patent: 6744124 (2004-06-01), Chang et al.
patent: 6774466 (2004-08-01), Kajiwara et al.
patent: 6992385 (2006-01-01), Satou et al.
patent: 7256501 (2007-08-01), Okamoto et al.
patent: 2005/0218494 (2005-10-01), Satou et al.
patent: 57-103342 (1982-06-01), None
patent: 1-266752 (1989-10-01), None
patent: 02-281737 (1990-11-01), None
patent: 2-310956 (1990-12-01), None
patent: 04-004764 (1992-01-01), None
patent: 5-121615 (1993-05-01), None
patent: 05-343578 (1993-12-01), None
patent: 06-291223 (1994-10-01), None
patent: 07-078900 (1995-03-01), None
patent: 8-064634 (1996-03-01), None
patent: 09-129798 (1997-05-01), None
patent: 11-054673 (1999-02-01), None
patent: 11177007 (1999-07-01), None

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