MOSFET package

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Details

C257S676000, C257S693000, C257S696000, C257S776000, C257SE23010, C257SE23031, C257SE23039, C257SE23043, C361S773000, C361S813000, C438S123000, C438S197000

Reexamination Certificate

active

07985991

ABSTRACT:
A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

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