MOSFET input type BiMOS IC device

Details MOSFET input type BiMOS IC device MOSFET input type BiMOS IC device

1991-09-23

1993-09-21

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257371, 257379, 257395, 257401, 257565, 257577, 257653, 257655, H01L 2702, H01L 2701, H01L 2972

Patent

active

052472000

ABSTRACT:
A BiMOS integrated circuit device comprises a bipolar transistor and at least one MOSFET. The collector and emitter of the bipolar transistor are connected to a high potential source and a low potential source, respectively. The MOSFET has two gate electrodes, a source, and a drain. The source is connected to the high potential source, and the drain is the base of the bipolar transistor by a diffusion layer. The diffusion layer is located between the gate electrodes, and serves as both the base of the bipolar transistor and the drain of the MOSFET. Therefore, the MOSFET has a great channel width, and a large current can be supplied to the base of the bipolar transistor. In other words, the MOSFET has a great driving capability, and the bipolar transistor has a high amplification factor.

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T. Tanaka, Y. Yasuda, M. Ohayashi, M. Okamura, "A New MOS-Gate Bipolar Transistor With Fast Switching Speed and High Current Capability", 2419 Japanese Journal of Applied Physics Supplements, 17th Conf. on Solid State Devices and Materials, Aug. 25-27, 1985, Tokyo, Japan, pp. 389-392.

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