MOSFET including epitaxial halo region

Details MOSFET including epitaxial halo region MOSFET including epitaxial halo region

2009-04-20

2010-11-09

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257S408000, C257S900000, C257SE29012, C257SE29063

Reexamination Certificate

active

07829939

ABSTRACT:
A metal oxide semiconductor field effect transistor structure and a method for fabricating the metal oxide semiconductor field effect transistor structure provide for a halo region that is physically separated from a gate dielectric. The structure and the method also provide for a halo region aperture formed horizontally and crystallographically specifically within a channel region pedestal within the metal oxide semiconductor field effect transistor structure. The halo region aperture is filled with a halo region formed using an epitaxial method, thus the halo region may be formed physically separated from the gate dielectric. As a result, performance of the metal oxide semiconductor field effect transistor is enhanced.

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