MOSFET having tapered gate electrode

Details MOSFET having tapered gate electrode MOSFET having tapered gate electrode

1997-03-10

1998-11-10

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257412, 257768, H01L 2976, H01L 2994, H01L 31062, H01L 2348

Patent

active

058348166

ABSTRACT:
A MOSFET comprising a gate oxide layer on a silicon substrate, a polysilicon gate formed on the gate oxide layer, the length of which gradually widens going from bottom to top, a side gate oxide layer formed by an oxidation process surrounding the polysilicon gate, the side gate oxide layer also gradually widening from bottom to top, a source/drain region beside the gate oxide layer, a connection element having a stacked structure of a polysilicon and/or polycide layer on the field oxide, a doped polysilicon side wall beside the side gate oxide layer and making electric connection between the source/drain region and the connection element.

REFERENCES:
patent: 4442591 (1984-04-01), Haken
patent: 4546535 (1985-10-01), Shepard
patent: 4939154 (1990-07-01), Shimbo
patent: 5073510 (1991-12-01), Kwon
patent: 5141891 (1992-08-01), Arima
patent: 5175118 (1992-12-01), Yoneda
patent: 5196357 (1993-03-01), Boardman

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