Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-01-03
2006-01-03
Wilson, Christian D. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S197000, C438S286000, C438S302000, C438S303000, C438S514000, C438S527000
Reexamination Certificate
active
06982216
ABSTRACT:
A method is provided for fabricating a MOSFET device. The method begins by forming a semiconductor device having a substrate on which a gate conductor having sidewalls separates a source region and a drain region. An oxide layer is formed over the gate sidewalls and a portion of the substrate. Ions of a first conductivity are implanted into the source and the drain regions to define source and drain extensions that respectively extend in part under the gate conductor. A nitride layer is formed over the oxide layer that extends over the portion of the substrate. An angled ion implant is performed during which the gate conductor shields a portion of the nitride layer over at least a portion of the drain region from damage by the angled ion implant. The angled ion implant selectively damages portions of the nitride layer in which ions are implanted to form damaged portions of the nitride layer. The damaged portions of the nitride layer are removed while leaving undamaged portions of the nitride layer as a nitride mask to protect at least a portion of the source and drain extensions from a subsequent dopant implant. Ions of the first conductivity type are implanted into the source region and the drain region while using the undamaged portions of the nitride layer as a mask to form deep source and deep drain regions, respectively. A conductive layer is formed over exposed portions of the deep source region and the deep drain region such that a lateral distance between an edge of the conductive layer over the source region and an end of the source extension under the gate conductor is less than a lateral distance between an edge of the conductive layer over the drain region and an end of the drain extension under the gate conductor.
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Mayer Fortkort & Williams PC
Mayer, Esq. Stuart H.
Menz Douglas M.
Sony Electronics Inc.
Williams Esq. Karin L.
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