MOSFET having improved driving performance

Details MOSFET having improved driving performance MOSFET having improved driving performance

1995-11-09

1997-06-17

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257340, 257408, 257413, 257384, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056400357

ABSTRACT:
A gate oxide film is formed on the surface of a P-type silicon substrate. A gate electrode is formed on the gate oxide film. Phosphorus is ion-implanted into the P-type silicon substrate, using the gate electrode as a mask. Thus, N.sup.- -type layers of LDD regions are formed in the P-type silicon substrate. Sidewall regions of material having a high dielectric constant are formed on both sides of the gate electrode. The P-type silicon substrate is etched downward adjacent to both the sidewall regions. N.sup.+ -type layers of source and drain regions are formed in the etched surface of the P-type silicon substrate.

REFERENCES:
patent: 4906589 (1990-03-01), Chao
patent: 5041885 (1991-08-01), Gualandris et al.

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