MOSFET having fine gate electrode structure

Details MOSFET having fine gate electrode structure MOSFET having fine gate electrode structure

1996-04-03

1997-06-17

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257389, 257412, H01L 2976, H01L 2994

Patent

active

056400330

ABSTRACT:
MOSFET having a fine gate structure comprises a semiconductor substrate of a first conductivity type, source and drain regions of a second conductivity type formed in the semiconductor substrate to define a channel region therebetween, a first insulating film provided over the source region, a second insulating film formed over the first insulating film to provide a side wall, a gate insulating film provided on the semiconductor substrate to cover the channel region, and a gate electrode provided over the gate insulating film to extend to the second insulating film and to cover the side wall. In the structure, the gate electrode is provided to have a thickness for defining an effective channel length at the side wall of the second insulating film.

REFERENCES:
patent: 4123771 (1978-10-01), Uchida
patent: 4212100 (1980-07-01), Daivinen et al.
patent: 4914500 (1990-04-01), Liu et al.
patent: 5097301 (1992-03-01), Sanchez
patent: 5182619 (1993-01-01), Pfiester
Morimoto et al, "Submicrometer-Gate MOSFET by use of FIBE and Dry Development technique"; IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb. 1987 pp. 230-234.

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