Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-07-20
2011-10-25
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S406000, C257S411000
Reexamination Certificate
active
08044471
ABSTRACT:
A transistor, such a MOSFET, having an epitaxially grown strain layer disposed over a channel region of a substrate for stressing the channel region to increase the carrier mobility in the channel, and method for making same. The strain layer is composed of a high dielectric constant material.
REFERENCES:
patent: 4288470 (1981-09-01), Bate et al.
patent: 5619051 (1997-04-01), Endo
patent: 5949117 (1999-09-01), Sandhu et al.
patent: 6133605 (2000-10-01), Kishi
patent: 6163060 (2000-12-01), Gardner et al.
patent: 6387761 (2002-05-01), Shih et al.
patent: 6429061 (2002-08-01), Rim
patent: 6528856 (2003-03-01), Bai et al.
patent: 6563152 (2003-05-01), Roberds et al.
patent: 6607952 (2003-08-01), Yagishita et al.
patent: 6627519 (2003-09-01), Kwon et al.
patent: 6723581 (2004-04-01), Chabal et al.
patent: 6784506 (2004-08-01), Xiang et al.
patent: 6956267 (2005-10-01), Hattangady et al.
patent: 7045847 (2006-05-01), Lin et al.
patent: 7268388 (2007-09-01), Basceri et al.
patent: 2002/0185697 (2002-12-01), Kim
patent: 2006/0148151 (2006-07-01), Murthy et al.
Nakajim, et al., “Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition”; Applied Physics Letters, vol. 79, No. 5, Jul. 30, 2001.
Wong, “Thermal Stability and Electronic Structure of Hafnium and Zirconium Oxide Films for Nanoscale MOS Device Applications”, 2004 IEEE, Nov. 3-5, 2004.
U.S. Appl. No. 11/053,022 of Min Cao, “MOSFET Having a Channel Mechanically Stressed by an Epitaxially Grown, High K. Strain Layer”, filed Feb. 8, 2005.
Duane Morris LLP
Kouh Won Joon
Lee Eugene
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
MOSFET having a channel mechanically stressed by an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET having a channel mechanically stressed by an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET having a channel mechanically stressed by an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4290718