MOSFET gate electrodes having performance tuned work...

Details MOSFET gate electrodes having performance tuned work... MOSFET gate electrodes having performance tuned work...

2006-04-04

2006-04-04

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000, C438S275000, C438S775000, C257S412000

Reexamination Certificate

active

07022559

ABSTRACT:
An insulated gate field effect transistor (FET) of a particular conductivity type, has as a gate electrode, a non-semiconductive material with a work function that approximates the work function of a semiconductive material that is doped to be of the same conductivity type.In a particular embodiment, an integrated circuit includes an n-channel FET having a tantalum-based gate electrode with a work function approximately the same as n-doped polysilicon, and a p-channel FET has a tantalum nitride-based gate electrode with a work function approximately the same as p-doped polysilicon.

REFERENCES:
patent: 3855610 (1974-12-01), Masuda et al.
patent: 4561170 (1985-12-01), Doering et al.
patent: 4696092 (1987-09-01), Doering et al.
patent: 4892835 (1990-01-01), Rabinzohn et al.
patent: 5021356 (1991-06-01), Henderson et al.
patent: 5061647 (1991-10-01), Roth et al.
patent: 5223455 (1993-06-01), Itoh et al.
patent: 5240868 (1993-08-01), Bae et al.
patent: 5523257 (1996-06-01), Yamazaki et al.
patent: 5555112 (1996-09-01), Oritsuki et al.
patent: 5619057 (1997-04-01), Komatsu
patent: 5627084 (1997-05-01), Yamazaki et al.
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 5736767 (1998-04-01), Yoshitomi et al.
patent: 5891766 (1999-04-01), Yamazaki et al.
patent: 5939731 (1999-08-01), Yamazaki et al.
patent: 5948702 (1999-09-01), Rotondaro
patent: 5985762 (1999-11-01), Geffken et al.
patent: 5986314 (1999-11-01), Seshadri et al.
patent: 5995177 (1999-11-01), Fujikawa et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6066533 (2000-05-01), Yu
patent: 6166417 (2000-12-01), Bai et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 90-158171 (1990-02-01), None
patent: 02-158117 (1990-06-01), None
S. Wolf, “Silicon Processing for the VLSI Era”, vol. 2, 1990, Lattice Press, CA, USA.
Sze, “Physics of Semiconductor Devices”, 2nd Ed., 1981, J. Wiley & Sons, Taiwan ROC.
Wolf, S. “Silicon Processing for the VLSI Era”, Col. 3, 1990, 3 pages, Lattice Press, CA USA.
Sze, “Physics of Semiconductor Devices”, 2ndEd., 1981, 12 pages, J. Wiley & Sons, Taiwan ROC.
Kazuhide, I., et al., “Ion energy, ion flux, and ion species effects on crystallographic sand electrical properties of sputter-deposited Ta thin films”, Journal of Vacuum Science & Technology A, 5 pages, Second Series, vol. 15, No. 5, Sep./Oct. 1997.

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