MOSFET device with unsymmetrical LDD region

Details MOSFET device with unsymmetrical LDD region MOSFET device with unsymmetrical LDD region

1997-10-24

1999-09-14

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257406, 257408, 257410, 257411, 438287, H01L 2976, H01L 31062

Patent

active

059527005

ABSTRACT:
A semiconductor device is disclosed, including: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a first gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a first region including one edge of the gate electrode; a second gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a second portion including the other edge of the gate electrode, the second gate insulating layer being thicker than the first gate insulating layer; a first impurity region formed in a predetermined portion of the semiconductor substrate, placed on both sides of the gate electrode; and a second impurity region formed in a predetermined portion of the semiconductor substrate, placed under the second gate insulating layer.

REFERENCES:
patent: 3855610 (1974-12-01), Masuda et al.
patent: 4746624 (1988-05-01), Cham et al.
patent: 5451807 (1995-09-01), Fujita
patent: 5801416 (1998-09-01), Choi et al.

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