Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-16
2000-03-28
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257412, 257433, 257344, 257336, 257900, H01L 2976
Patent
active
060435453
ABSTRACT:
A MOSFET device protects the device from the short channel effect and decrease the resistance of a gate of the device. The MOSFET device includes a gate formed on a substrate and two source/drain regions. The source/drain regions are formed in the substrate at the sides of the gate. An oxide layer includes a first structure and a second structure. The first structure is at the side walls of the gate with the top of the first structure being lower than the top of the gate. The second structure is formed on the substrate and is connected to the first structure. A first spacer is formed on the second structure and beside the first structure. A second spacer is formed on the second structure and beside the first spacer. A self-aligned metal layer is formed on the gate, the first spacer, and over the substrate. As a result, the MOSFET device has an ultra-shallow junction under the first spacer to reduce the source/drain resistance and increase the operating rate of the device.
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"Simplified Lightly Doped Drain Process" IBM Technical Disclosure, vol. 30, No. 12, May 1998.
Chen Kun-Cho
Huang Heng-Sheng
Tseng H. C.
Ortiz Edgardo
Saadat Mahshid
United Microelectronics Corp.
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