MOSFET device having recessed gate-drain shield and method

Details MOSFET device having recessed gate-drain shield and method MOSFET device having recessed gate-drain shield and method

1999-10-29

2000-07-18

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257630, H01L 2978

Patent

active

060911107

ABSTRACT:
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.

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