Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-21
2011-06-21
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21409, C438S289000
Reexamination Certificate
active
07964921
ABSTRACT:
To provide a MOSFET which is increased in substrate bias effect γ without increasing parasitic capacitance and junction leak current, the MOSFET includes: a gate electrode (104) formed on a semiconductor substrate (101) and an insulating film (103); a sidewall insulating film (106) covering the side surface of the gate electrode (104); and source/drain regions surrounded by the sidewall insulating film (106) and a shallow trench isolation (102) in a self-alignment manner, in which an impurity concentration of a first conductivity type which is the same type as a well-forming impurity has a profile becoming, in a lower direction of the gate electrode (104), lower in a channel formation region, then higher and again lower, and a high-concentration first conductivity type impurity region (110) is provided, in which the impurity concentration of the first conductivity type is formed to be low in the source/drain regions and to be high below the gate electrode (104) sandwiched between the source/drain regions.
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McGinn IP Law Group PLLC
Potter Roy K
Renesas Electronics Corporation
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