Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-08
2009-06-09
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27049, C257SE29344
Reexamination Certificate
active
07545007
ABSTRACT:
A MOS varactor is formed having a gate electrode comprising at least two abutting oppositely doped regions shorted together, in which the two regions are implanted simultaneously with source/drain implants for first and second types of transistor; at least one contact to a lower electrode is also formed simultaneously with the source/drain implants for the first type of transistor; the varactor insulator is formed simultaneously with the gate insulator for one type of transistor; and the lower electrode is formed simultaneously with a well for the first type of transistor, so that no additional mask is required.
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Greer Heidi L.
Kim Seong-Dong
Rassel Robert M.
Vaed Kunal
Canale Anthony J.
Dickey Thomas L
International Business Machines - Corporation
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