MOS type semiconductor device with a current detecting function

Details MOS type semiconductor device with a current detecting function MOS type semiconductor device with a current detecting function

1996-12-05

1999-12-14

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257339, 257139, H01L 2976, H01L 2994, H01L 31062, H01L 2974

Patent

active

060021535

ABSTRACT:
In an IGBT with a current sensing function having a plurality of principal current cells and at least one current sensing cell, a P-type base region of the current sensing cell in a current sensing cell region is formed larger than a P-type base region of the principal current cell in a principal current cell region. The IGBT is so constituted that the influence of temperature characteristic of parasitic resistor between the principal current cells and current sensing cell upon detected current can be eliminated and the same interval between the P-type base regions can be set for all the cells.

REFERENCES:
patent: 5281872 (1994-01-01), Mori
patent: 5365085 (1994-11-01), Tokura et al.

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