Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S174000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000, C257S363000, C257S368000
Reexamination Certificate
active
11111797
ABSTRACT:
In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a second conductivity type are formed in the semiconductor substrate. A channel region is formed in the semiconductor substrate between the first and second impurity regions. A first conductive area is defined on the first impurity region in the vicinity of the channel region. A second conductive area is defined on the first impurity region so as to be supplied with an electrostatic discharge current. A third conductive area is defined on the first impurity region to establish an electrical connection between the first and second conductive area. At least one heat-radiation area is defined in the third conductive area so as to be at least partially isolated therefrom and thermally contacted with the first conductive area.
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Japanese Patent Abstract of 5-505064, published Jul. 29, 1993.
Hirata Morihisa
Kodama Noriyuki
Sawahata Koichi
NEC Electronics Corporation
Soward Ida M.
Sughrue & Mion, PLLC
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