Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-01
1995-11-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257346, 257408, 257412, 257900, H01L 2910, H01L 2978
Patent
active
054669588
ABSTRACT:
In a semiconductor device, an n.sup.+ polysilicon layer is formed on a substrate through a gateoxide layer. A p.sup.+ source or drain diffusion layer is formed on both sides of an impurity layer in the substrate. The silicon layer positions over an intermediate portion of a channel formation layer, and has an oxide layer on upper surface thereof. The silicon layers have their side portions a p.sup.+ type polysilicon layer to be a gate electrode together with the silicon layer. The gate electrode semiconductor layer is formed on the channel formation layer through the gate insulation layer in the manner that, in a portion contacting with the gate insulation layer, the nearer portions approaches to the impurity layers of the source and drain regions, the larger a work function increases.
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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