MOS-type semiconductor device and method of making the same

Details MOS-type semiconductor device and method of making the same MOS-type semiconductor device and method of making the same

1994-01-19

1995-07-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257346, 257411, 257640, 437 42, 437241, 437243, H01L 2702, H01L 21265

Patent

active

054364817

ABSTRACT:
A MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type; a pair of impurity diffused layers of a second conductivity type different from the first conductivity type formed in the semiconductor substrate and mutually separated by a distance of 0.1 .mu.m or less; a gate insulating film including at least two layers of a silicon oxide film and a silicon nitride film and formed on a portion of the semiconductor substrate disposed between the pair of impurity diffused layers; and a gate electrode formed on the gate insulating film, wherein preferably the silicon nitride film has a thickness of 4.5 nm to 14.86 nm.

REFERENCES:
patent: 4869781 (1989-09-01), Euen et al.
Deep-Submicrometer CMOS Technology With Reoxidated or Annealed Nitrided-Oxide Gate Dielectrics Prepared By Rapid Thermal Processing, T. Hori, IEEE Transactions of Electron Devices, vol. 39, No. 1, Jan. 1992, pp. 118-126.
Improvement In Gate-Dielectric Characteristics Of Nitrated Oxides Prepared By Rapid Thermal Processing, T. Hori, Applied Physics vol. 60, No. 11 (1991), pp. 1127-1130.

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