MOS-type semiconductor clamping circuit

Details MOS-type semiconductor clamping circuit MOS-type semiconductor clamping circuit

1994-07-20

1996-01-30

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257548, 257928, 327537, 327541, 327546, 327566, 307116, H01L 2978, H02B 124, H01H 3500

Patent

active

054882478

ABSTRACT:
A MOS-type semiconductor clamping circuit includes a semiconductor substrate receiving a substrate potential, a well isolated electrically from the substrate potential, and MOS-type transistors formed in the well. Those transistors are connected with each other in series, each transistor has its gate connected to its drain, and a stable potential different from the substrate potential is applied to the well.

REFERENCES:
patent: 5251172 (1993-10-01), Yamauchi

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