MOS transistors having vertical current flow

Details MOS transistors having vertical current flow MOS transistors having vertical current flow

1994-08-05

2000-07-25

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257336, 257401, H01L 2976

Patent

active

060939486

ABSTRACT:
The process provides first for the accomplishment of low-doping body regions at the sides and under a gate region and then the accomplishment of high-doping body regions inside said low-doping body regions and self-aligned with said gate region. There is thus obtained an MOS power transistor with vertical current flow which has high-doping body regions self-aligned with said gate region and with a reduced junction depth.

REFERENCES:
patent: 4345265 (1982-08-01), Blanchard
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4803532 (1989-02-01), Mihara
patent: 4860072 (1989-08-01), Zommer
patent: 4974059 (1990-11-01), Kinzer
patent: 5057884 (1991-10-01), Suzuki et al.
patent: 5160985 (1992-11-01), Akiyama
patent: 5198688 (1993-03-01), Tsuchiya et al.
S.M. Sze; "Semiconductor Devices Physics and Technology"; 1985; pp 110-111.

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