MOS transistor with non-uniform channel dopant profile

Details MOS transistor with non-uniform channel dopant profile MOS transistor with non-uniform channel dopant profile

1992-10-30

1995-06-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257402, 257404, 257655, 257657, H01L 2906, H01L 2978

Patent

active

054225108

ABSTRACT:
An MOS transistor wherein the channel between the source and drain is formed with two regions having different dopant concentrations. The region adjacent the source has a normal concentration, while that adjacent the drain has a reduced dopant concentration. This reduces the degrading effects of hot carrier injection, thereby extending the life of the transistor.

REFERENCES:
patent: 4395725 (1983-07-01), Parekh
patent: 4549336 (1985-10-01), Sheppard
patent: 5012315 (1991-04-01), Shur
patent: 5231299 (1993-07-01), Ning et al.

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