MOS transistor with large gate width

Details MOS transistor with large gate width MOS transistor with large gate width

1996-11-15

1998-02-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257374, 257397, 257401, 257404, H01L 2906

Patent

active

057172390

ABSTRACT:
In a MOS transistor device, the gate width is effectively enlarged without increasing the occupied area of the transistor by forming a plurality of rectangular grooves in the direction perpendicular to the gate width, and filling in these rectangular grooves with a gate electrode. Since these grooves are formed by anisotropic etching, there is no risk of contaminating the wafer.

Affiliated with

Also associated with

Rating

MOS transistor with large gate width does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor with large gate width, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor with large gate width will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2079304