MOS transistor with high threshold voltage

Details MOS transistor with high threshold voltage MOS transistor with high threshold voltage

1991-05-15

1993-08-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257362, 257409, H01L 2362, H01L 2976

Patent

active

052391957

ABSTRACT:
Disclosed is a MOS transistor with high threshold voltage comprising, in a semiconductor substrate with a first type of conductivity, surface drain and source regions with the second type of conductivity having a high doping concentration, separated by a thick oxide zone in which there is formed, in the substrate, an overdoped region with the first type of conductivity. Each of the drain and source regions is inserted in a well with the second type of conductivity, having a low doping concentration, formed in the substrate.

REFERENCES:
patent: 4525378 (1985-06-01), Schwabe et al.
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4819045 (1989-04-01), Murakami
patent: 4916500 (1990-04-01), Yazawa et al.
patent: 4987465 (1991-01-01), Longcor et al.
patent: 4990983 (1991-02-01), Custode et al.
patent: 5047820 (1991-09-01), Garnett
1986 EOS/ESD Symposium Proceedings, "Design and Test results for a robust CMOS VLSI input protection network", by Nelson et al., pp. 188-192.
Y. P. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill Book Company, 1985, Sections 10.3 and 10.4, pp. 417-433.

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