MOS transistor with fully silicided gate

Details MOS transistor with fully silicided gate MOS transistor with fully silicided gate

2006-01-10

2009-12-29

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000, C438S655000, C438S664000, C438S682000, C257S288000, C257S350000, C257S384000, C257S412000, C257SE29161, C257SE21199, C257SE21622, C257SE21636

Reexamination Certificate

active

07638427

ABSTRACT:
An MOS transistor with a fully silicided gate is produced by forming a silicide compound in the gate separately and independently of silicide portions located in source and drain zones of the transistor. To this end, the silicide portions of the source and drain zones are covered by substantially impermeable coatings. The coatings prevent the silicide portions of the source and drain zones from increasing in volume during separate and independent formation of the gate silicide compound. The silicide gate may thus be thicker than the silicide portions of the source and drain zones.

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Sim, et al, “Dual Work Function Metal Gates Using Full Nickel Silicidation of Doped Poly-Si,” IEEE Electron Device Letters, IEEE Service Center, New York, NY, US, vol. 24, No. 10, Oct. 2003, pp. 631-633, XP001175119; ISSN: 0741-3106.
Preliminary French Search Report, FR 05 00896, dated Nov. 11, 2005.

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