MOS transistor in an active region

Details MOS transistor in an active region MOS transistor in an active region

2007-12-11

2007-12-11

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S395000, C257S396000, C257SE21540

Reexamination Certificate

active

11249400

ABSTRACT:
After an isolation region is formed using a field-forming silicon nitride film, this silicon nitride film is patterned, thereby a gate trench is formed. Next, a gate electrode material is buried into the gate trench, and this is etched back. Thereafter, the silicon nitride is removed, thereby a contact hole is formed. A contact plug is buried into this contact hole. With this arrangement, the contact plug can be formed without using a diffusion layer contact pattern. At the same time, the periphery of the contact plug substantially coincides with a boundary between the element isolation region and the active region. Accordingly, the active region can be reduced.

REFERENCES:
patent: 2006/0220110 (2006-10-01), Lai et al.
patent: 2007/0007563 (2007-01-01), Mouli
patent: 2002-43544 (2002-02-01), None
patent: 2002-110930 (2002-04-01), None

Affiliated with

Also associated with

Rating

MOS transistor in an active region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor in an active region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor in an active region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3835758