MOS transistor having three gate electrodes

Details MOS transistor having three gate electrodes MOS transistor having three gate electrodes

1993-09-10

1995-01-03

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257366, 257401, H01L 2976, H01L 2994

Patent

active

053789130

ABSTRACT:
An MOS transistor has a source region, a drain region, first gate electrode with a first channel zone allocated to it, second gate electrodes having a second channel zone allocated to it, and a third gate electrode with a corresponding third channel zone. The second channel zone is more highly doped than the base material in which the MOS transistor is formed, while the third channel zone is more lightly doped than the second channel zone. The second and third gate electrodes are conductively connected so that higher drain voltages are accommodated at high-frequencies while avoiding tunnel punch-through.

REFERENCES:
IBM Technical Disclosure Bulletin, vol. 16, No. 5, Oct. 1973, "Bidirectional, high voltage, MOSFET's" by Fang et al., pp. 1653-1654.

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