MOS transistor having improved oxynitride dielectric

Details MOS transistor having improved oxynitride dielectric MOS transistor having improved oxynitride dielectric

1994-11-10

1996-07-30

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257649, 257639, 257760, H01L 2978

Patent

active

055414362

ABSTRACT:
High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.

REFERENCES:
patent: 3422321 (1969-01-01), Tombs
patent: 3629088 (1971-12-01), Frank et al.
patent: 4188565 (1980-02-01), Mizukami et al.
patent: 4438157 (1984-03-01), Romano-Moran
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4620986 (1986-11-01), Yau et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 4623912 (1986-11-01), Chang et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4721631 (1988-01-01), Endo et al.
patent: 4901133 (1990-02-01), Curran et al.
patent: 4981307 (1990-12-01), Ito et al.
patent: 5254489 (1993-10-01), Nakata
patent: 5254506 (1993-10-01), Hori
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5369297 (1994-11-01), Kusunoki et al.
patent: 5377139 (1994-12-01), Cage et al.
patent: 5407870 (1995-04-01), Okada et al.
Hijiya, S. et al., "Electically Alterable Read-Only Memory Cell With Graded Energy Band-Gap Insulator", IEDM, IEEE 1980, pp. 590-593.
Hwang, et al., "Electrical Characteristics Of Ultrathin Oxynitride Gate Dielectric Prepared By Rapid Thermal Oxidation . . . " App. Phys. Lett. 57 (10), 3 Sep. 1990, pp. 1010-1011.
Hwang, et al., "Electrical and Reliability Characteristics Of Ultrathin Oxynitride Gate Dielectric Prepared By Rapid Ther . . . " I.E.D.M. 90-421, 1990, pp. 16.5.1-16.5.4.
Ting, et al., "Composition and Growth Kinetics Of Ultrathin SiO2 Films Formed By Oxidizing Si Substrates In N2O," Appl. Phys. Lett. 57 (26), 24 Dec. 1990, pp. 2808-2810.
Hwang, et al., "Improved Reliability Characteristics Of Sub-Micron Nmosfets With Oxynitride Gate Dielectric Prepared By . . . " Elec. Dev. Lett., Mar. 25, 1991, pp. 1-14.
Joshi, et al., Oxynitride Gate Dielectrics for P+ Polysilicon Gate MOS Devices, IEEE Electron Device Letters, vol. 14, No. 12, Dec. 1993, pp. 560-562.

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