MOS transistor having an offset region

Details MOS transistor having an offset region MOS transistor having an offset region

2006-10-03

2006-10-03

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S340000, C257SE29023

Reexamination Certificate

active

07115946

ABSTRACT:
A semiconductor device includes a semiconductor region of a first conductivity type, a drain region of the first conductivity type, an offset region of the first conductivity type, a body region of the second conductivity type, a source region of the first conductivity type, a gate insulating film and a gate electrode. The drain region is provided in a surface of the semiconductor region and is shaped like a stripe. The offset region is provided in the surface of the semiconductor region and surrounds the drain region. The body region is provided in the surface of the semiconductor region and surrounds the offset region. The source region is provided in a surface of the body region and surrounds the offset region. The gate insulating film is provided on a part of the body region. The gate electrode is provided on the gate insulating film.

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