Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-05-06
2008-05-06
Lindsay, Jr., Walter (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C438S270000, C257SE21429, C257SE29135
Reexamination Certificate
active
07368769
ABSTRACT:
A metal oxide semiconductor (MOS) transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes a semiconductor substrate and an isolation layer formed in a predetermined region of the semiconductor substrate to define an active region. A channel trench region is disposed within the active region to cross the active region. A gate insulating layer is disposed to cover sidewalls and a bottom of the channel trench region. The MOS transistor has a gate pattern that fills the channel trench region and crosses above the active region. A portion of the sidewall of the gate pattern is recessed at an upper corner of the channel trench region and has a width smaller than the width of the top of the gate pattern and smaller than the width of the channel trench region.
REFERENCES:
patent: 7148527 (2006-12-01), Kim et al.
patent: 2003/0170955 (2003-09-01), Kawamura et al.
patent: 2004/0135176 (2004-07-01), Kim
patent: 2004/0166637 (2004-08-01), Ito et al.
patent: 2007/0090452 (2007-04-01), Cho et al.
patent: 2007/0148980 (2007-06-01), Cho
patent: 2007/0170522 (2007-07-01), Lee et al.
patent: 2007/0173007 (2007-07-01), Lee et al.
patent: 2007/0190716 (2007-08-01), Kim
patent: 2007/0200169 (2007-08-01), Kim
patent: 2007/0221991 (2007-09-01), Chung et al.
patent: 2007/0224762 (2007-09-01), Lee
patent: 2007/0235778 (2007-10-01), Shim
patent: 2007/0246774 (2007-10-01), Chung et al.
patent: 03-266424 (1991-11-01), None
patent: 2003-023150 (2003-01-01), None
patent: 2000-0026816 (2000-05-01), None
patent: 10-2004-0054248 (2004-06-01), None
patent: 10-2004-0064924 (2004-07-01), None
patent: WO 03/010827 (2003-02-01), None
Lee & Morse P.C.
Lindsay, Jr. Walter
Samsung Electronics Co,. Ltd.
LandOfFree
MOS transistor having a recessed gate electrode and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS transistor having a recessed gate electrode and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor having a recessed gate electrode and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2796273