MOS transistor having a mesh-type gate electrode

Details MOS transistor having a mesh-type gate electrode MOS transistor having a mesh-type gate electrode

2006-07-18

2006-07-18

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S368000, C257SE29111

Reexamination Certificate

active

07078775

ABSTRACT:
A mesh-shaped gate electrode is located over a surface of a substrate. The mesh-shaped gate electrode includes a plurality of first elongate wirings extending parallel to one another, and a plurality of second elongate wirings extending parallel to one another. The first elongate wirings intersect the second elongate wirings to define an array of gate intersection regions over the surface of the substrate and to further define an array of source/drain regions of the substrate. To reduce gate capacitance, at least one oxide region may be located in the substrate below the mesh-shaped gate electrode. For example, an array of oxide regions may be respectively located below the array of gate intersection regions.

REFERENCES:
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5672894 (1997-09-01), Maeda et al.
patent: 55113378 (1980-09-01), None
patent: 11-261056 (1999-09-01), None
patent: 11261056 (1999-09-01), None
“Field-effect transistor output driver” IBM Technical Disclosure Bulletin, IBM Corp. New York, US, vol. 28, No. 8, 1986, pp. 3497-3498, XP002088269.

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