MOS transistor device with a locally maximum concentration...

Details MOS transistor device with a locally maximum concentration... MOS transistor device with a locally maximum concentration...

2005-04-26

2005-04-26

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S332000, C257S333000, C257S341000

Reexamination Certificate

active

06885062

ABSTRACT:
In order to obtain an on resistance that is as low as possible, it is proposed, in the case of a MOS transistor device, to form the avalanche breakdown region in an end region of a trench structure. As an alternative or in addition, it is proposed to form a region of local maximum dopant concentration of a first conductivity type in the region between a source and a drain in proximity to the gate insulation in a manner remote from the gate electrode.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6072215 (2000-06-01), Kawaji et al.
patent: 6285060 (2001-09-01), Korec et al.
patent: 20010045599 (2001-11-01), Hueting et al.
patent: 20020093050 (2002-07-01), Hirler et al.
patent: WO 0101484 (2001-01-01), None
patent: WO 0201644 (2002-01-01), None

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