MOS transistor device structure combining Si-trench and...

Details MOS transistor device structure combining Si-trench and... MOS transistor device structure combining Si-trench and...

2008-05-06

2008-05-06

Robinson, Mark A. (Department: 4122)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257S401000, C257S288000

Reexamination Certificate

active

07368785

ABSTRACT:
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.

REFERENCES:
patent: 4290078 (1981-09-01), Ronen
patent: 6150702 (2000-11-01), Funaki et al.
patent: 6246101 (2001-06-01), Akiyama
patent: 6879005 (2005-04-01), Yamaguchi et al.

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